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| TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2N3762* 2N3764 40 40 5.0 1.5 2N3763* 2N3765 60 60 Unit Vdc Vdc Vdc Adc TO-39* (TO-205AD) 2N3762, 2N3763 2N3762* 1 2N3763* Total Power Dissipation @ TA = +250C Operating & Storage Junction Temp. Range PT Top, Tstg Symbol 1.0 2N3764 2 2N3765 0.5 W 0 -55 to +200 Max. C THERMAL CHARACTERISTICS Characteristics TO-5* 2N3762L, 2N3763L Unit 2N3762* 2N3763* 2N3764 2N3765 TO-46* (TO-206AB) 2N3764, 2N3765 *See appendix A for package outline 0 Thermal Resistance Junction-to-Case 60 88 C/W RJC *Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices 1) Derate linearly at 5.71 mW/0C for TA > +250C 2) Derate linearly at 2.86 mW/0C for TA > +250C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 20 Vdc VCB = 30 Vdc VCB = 40 Vdc VCB = 60 Vdc 2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765 V(BR)CEO 40 60 100 100 10 10 Vdc ICBO Adc Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 20 Vdc VEB = 2.0 Vdc, VCE = 30 Vdc Emitter-Base Cutoff Current VEB = 2.0 Vdc VEB = 5.0 Vdc Symbol 2N3762, 2N3764 2N3763, 2N3765 All Types 2N3762, 2N3764 2N3763, 2N3765 ICEX Min. Max. 100 100 200 10 10 Unit Adc IEBO Adc Adc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 mAdc, VCE = 1.0 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 500 mAdc, VCE = 1.0 Vdc IC = 1.0 Adc, VCE = 1.5 Vdc IC = 1.5 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 150 m Adc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 150 m Adc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc 35 40 40 30 20 30 20 2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765 hFE 140 120 80 VCE(sat) 0.1 0.22 0.5 0.9 0.8 1.0 1.2 1.4 Vdc VBE(sat) 0.9 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz 2N3762, 2N3764 2N3763, 2N3765 hfe Cobo Cibo t 1.8 1.5 6.0 6.0 25 80 8.0 35 80 35 pF pF s s s s Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz SWITCHING CHARACTERISTICS Delay Time VCC = 30 Vdc, VEB = 0, Rise Time IC = 1.0 mAdc, IB1 = 100 mAdc Storage Time VCC = 30 Vdc, VEB = 0, Fall Time IC = 1.0 mAdc, IB1 = 100 mAdc (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. d r t s t f t 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 |
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